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ANA4N60B, ANP4N60B, ANB4N60B,
AND4N60B, ANI4N60B, ANU4N60B
Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC
Applications
SMPS
PFC
Features
Low Qg
Low Rdson
RoHS compliant
Table 1. Device summary
Part numbers Marking Package Packaging
ANA4N60B A4N60B TO-220FP Tube
ANP4N60B P4N60B TO-220 Tube
ANB4N60B B4N60B DPAK Tape and reel
AND4N60B D4N60B DPAK Tape and reel
ANI4N60B I4N60B I
2
PAK Tube
ANU4N60B U4N60B IPAK Tube
Table 2. Absolute Maximum Ratings
Symbol Parameter
Value Units
TO-220FP TO-220 DPAK I
2
PAK DPAK IPAK
ID
Drain current (continuous),
VGS= at TC = 25C
4 A
ID
Drain current (continuous),
VGS= at TC = 100C
2,5 A
IDM(1)
Drain current (pulsed) at
TC = 25C
16 A
VGS Gate-source voltage 20 V
PD
Maximum Power
Dissipation at TC = 25C
25 70 W
Maximum Power
Dissipation at TC = 100C
W
Tstg Storage temperature -55 +150
C Tj
Operating junction
temperature
-55 +150
TL
Soldering Temperature, for
10 sec.
260
Mounting Torque, 6-32 or
M3 Screw
1,13 Nm
Table 3. Thermal resistance
Symbol Parameter
Value Value
TO-220FP TO-220 DPAK I
2
PAK DPAK IPAK
Rthj-case
Thermal resistance
junction-case max
5 1,78 C/W
Rthj-amb
Thermal resistance
junction-ambient max
62,5 100 C/W
1 2 3
Gate Drain Source
N-Chanel Power MOSFET
2
Table 4. Electrical Characteristics of the MOSFET
Symbol Parameter Min. Typ. Max. Units Conditions
Ref.
Fig
Off Characteristics
V(BR)DSS Drain-to-Source Breakdown Voltage 600
V ID = 1 mA, VGS = 0
V(BR)DSS/TJ
Temperature Coefficient of Breakdown
Voltage
V/C
IDSS Zero Gate Voltage Drain Current
10 A
IGSS Gate to Body Leakage Current
100 nA VGS = 20V
On Characteristics
VGS(th) Gate Threshold Voltage 3,0 4,5 V
VDS = VGS, ID =
50A
VGS(th)/ TJ Threshold Voltage temp. coefficient
mV/C
RDS(on) Static Drain to Source On Resistance
2,2 VGS = 10V, ID = 2 A
gfs Forward Transconductance 3
S VDS = 15 V, ID = 2 A
Dynamic Characteristics
Ciss Input Capacitance
510
pF
VDS = 25V, f = 1
MHz, VGS = 0
Coss Output Capacitance
67
pF
Crss Reverse Transfer Capacitance
13
pF
Qg(tot) Total Gate Charge
12
nC
VDD = 480V, ID = 4
A,
VGS = 10V
Qgs Gate to Source Gate Charge
3,8
nC
Qgd Gate to Drain Miller Charge
9,8
nC
Switching Characteristics
td(on) Turn-On Delay Time
12 ns
VDD = 300 V, ID = 2
A
RG = 4.7 VGS = 10
V
tr Rise Time
9,5 ns
td(off) Turn-Off Delay Time
29 ns
tf Fall Time
16,5 ns
Table 5. Avalanche Characteristic
Symbol Parameter Typ. Max. Units Conditions Ref.Fig
EAS Single Pulse Avalanche Energy
120 mJ
EAR Repetitive Avalanche Energy
mJ
VDS(Avalanche) Repetitive Avalanche Voltage
V
IAR Avalanche Current
4 A
Table 6. Source drain diode
Symbol Parameter Min. Typ. Max. Units Conditions Ref.Fig
VSD Diode Forward Voltage
1,6 V ISD = 4 A, VGS = 0
IS
Continuous Source Current
(Body Diode)
4 A
ISM
Pulsed Source Current
(Body Diode)
16 A
trr Reverse Recovery Time
400 ns
ISD = 4 A, di/dt = 100A/s
VDD = 24V, Tj = 150C
Qrr Reverse Recovery Charge
1700
nC
N-Chanel Power MOSFET
3
N-Chanel Power MOSFET
4
N-Chanel Power MOSFET
5
N-Chanel Power MOSFET
6
TO-220FP
N-Chanel Power MOSFET
7
TO-220
N-Chanel Power MOSFET
8
D
2
PAK
N-Chanel Power MOSFET
9
DPAK
N-Chanel Power MOSFET
10
I
2
PAK
N-Chanel Power MOSFET
11
IPAK
Proezd 4806, Bld 4/3, Zelenograd, Moscow, Russia, 124460
Tel: +7(499)731-4906; +7(499)731-3270; Fax: +7(400)731-1508
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